050-7470 rev d 2-2006 apt15gp90b(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 350a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) c ollector-emitter on voltage (v ge = 15v, i c = 15a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 125c) collector cut-off current (v ce = 900v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 900v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt15gp90b(g) 900 30 43 21 60 60a @ 900v 250 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. min typ max 900 3 4.5 6 3.2 3.9 2.7 250 2500 100 9 00v apt15gp90b apt1 5gp90b g* *g denotes rohs compliant, pb free terminal finish. ? the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? ssoa rated ? low gate charge ? ultrafast tail current shutoff power mos 7 ? igbt t o - 2 4 7 g c e g c e
050-7470 rev d 2-2006 apt15gp90b(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the speci?cations and information contained herein. thermal and mechanical characteristics unit c/w gm characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 450v i c = 15a t j = 150c, r g = 4.3 ?, v ge = 15v, l = 100h,v ce = 900v i nductive switching (25c) v cc = 600v v ge = 15v i c = 15a r g = 4.3 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 15a r g = 4.3 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1100 120 32 7.5 60 10 27 60 9 14 33 55 tbd 430 200 9 14 70 100 tbd 790 500 unit pf v nc a ns j ns j min typ max .50 n/a 5.9
050-7470 rev d 2-2006 apt15gp90b(g) typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) v ce = 720v i c = 15a t j = 25c 250s pulse test<0.5 % duty cycle 60 50 40 30 20 10 0 100 90 80 70 60 50 40 30 20 10 0 6 5 4 3 2 1 0 1.10 1.05 1.00 0.95 0.90 0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 2 4 6 8 10 12 14 0 10 20 30 40 50 60 70 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 60 50 40 30 20 10 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 30a i c = 15a i c = 7.5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 30a i c = 15a i c = 7.5a t j = 125c t j = 25c v ge = 15v t j = 125c t j = 25c v ce = 450v v ce = 180v v ge = 10v
050-7470 rev d 2-2006 apt15gp90b(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 600v r g = 4.3 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 600v v ge = +15v r g = 4.3 ? r g = 4.3 ? , l = 100 h, v ce = 600v v ce = 600v t j = 25c , or 125c r g = 4.3 ? l = 100 h 14 12 10 8 6 4 2 0 35 30 25 20 15 10 5 0 2000 1500 1000 500 0 2500 2000 1500 1000 500 0 80 70 60 50 40 30 20 10 0 120 100 80 60 40 20 0 1200 1000 800 600 400 200 0 2000 1500 1000 500 0 v ge = 15v t j = 125c , v ge = 15v t j = 25 or 125c ,v ge = 15v t j = 25c , v ge = 15v t j = 125c t j = 25c v ce = 600v v ge = +15v r g = 4.3 ? t j = 125c t j = 25c v ce = 600v v ge = +15v r g = 4.3 ? v ce = 600v v ge = +15v t j = 125 c 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 0 10 20 30 40 50 0 25 50 75 100 125 r g = 4.3 ? , l = 100 h, v ce = 600v e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 7.5a e off, 7.5a e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 7.5a e off, 7.5a
050-7470 rev d 2-2006 apt15gp90b(g) typical performance curves 0.60 0.50 0.40 0.30 0.20 0.10 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 3,000 1,000 500 100 50 10 70 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance v s collecto r-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 figure 19b, transient thermal impedance model 0 10 20 30 40 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50% v ce = 600v r g = 4.3 ? 210 100 50 10 5 0.5 0.1 0.05 f max = min (f ma x , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e of f f max2 = p diss = t j - t c r jc c oes c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.222 0.278 0.00474 0.125 rc mode l case temperature( c) junctio n temp ( c) power (watts )
050-7470 rev d 2-2006 apt15gp90b(g) i c a d.u.t. v ce figure 21, inductive switching test circui t v cc figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt15dq100 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. to - 247 package outlin e e1 sac: tin, silver, copper 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 ( .185 ) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) c ollector collect o r emitte r gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs.
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